Theoretical and Natural Science

Open access

Print ISSN: 2753-8818

Online ISSN: 2753-8826

About TNS

The proceedings series Theoretical and Natural Science (TNS) is an international peer-reviewed open access series which publishes conference proceedings from a wide variety of disciplinary perspectives concerning theoretical studies and natural science issues. TNS is published irregularly. The series publishes articles that are research-oriented and welcomes theoretical articles concerning micro and macro-scale phenomena. Proceedings that are suitable for publication in the TNS cover domains on various perspectives of mathematics, physics, chemistry, biology, agricultural science, and medical science. The series aims to provide a high-level platform where academic achievements of great importance can be disseminated and shared.

Aims & scope of TNS are:
·Mathematics and Applied Mathematics
·Theoretical Physics
·Chemical Science
·Biological Sciences
·Agricultural Science & Technology
·Basic Science of Medicine
·Clinical and Public Health

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Editors View full editorial board

Florian Marcel Nuţă
Danubius University of Galaţi
Galaţi, Romania
Editor-in-Chief
floriann@univ-danubius.ro
Marwan Omar
Illinois Institute of Technology
Chicago, US
Associate Editor
drmarwan.omar@gmail.com
Sajjad Seifi Mofarah
UNSW Sydney
Sydney, Australia
Associate Editor
s.seifimofarah@unsw.edu.au
Maher G. Nawaf
University of Birmingham
Birmingham, UK
Associate Editor
mnawaf@captechu.edu

Latest articles View all articles

Research Article
Published on 8 June 2026 DOI: 10.54254/2753-8818/2026.34200
Xuanyi Liu

Gate-oxide thickness is a first-order design variable that controls electrostatic coupling, threshold behavior, and leakage in scaled field-effect transistors. This paper presents a compact Silvaco TCAD study of a silicon MOSFET in which the oxide thickness tox is swept from 1 to 5 nm while the drain bias is fixed at VD = 0.05 V. The simulation flow builds the device structure, defines the mesh and regions, assigns material/doping parameters, solves the bias sweep, and extracts transfer characteristics, threshold voltage, and subthreshold swing. The simulated ID-VG curves show a systematic positive shift with increasing tox, indicating weakened gate control. Using the maximum-slope definition of SS and a constant-current threshold criterion of ID = 1 × 10−7 A, the extracted SS increases from 70.57 to 91.31 mV/dec, while Vth increases from 0.029 to 0.517 V as tox increases from 1 to 5 nm. These results provide a clear TCAD-based visualization of the trade-off between gate dielectric scaling, switching efficiency, and threshold-voltage engineering.

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Liu,X. (2026). TCAD-Based Investigation of Gate Oxide Thickness Effects on SOI- MOSFETs. Theoretical and Natural Science,181,25-31.
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Research Article
Published on 8 June 2026 DOI: 10.54254/2753-8818/2026.34189
Chenping Liu

This work presents a compact-model-level comparison between the MIT virtual-source (MVS) model and a 65-nm foundry model for short-channel NMOS devices and simple load-dependent test circuits. A short-channel device schematic based on the MVS concept is first used to establish the physical picture of virtual-source-controlled transport. Two single-transistor test structures are then evaluated: a reference branch without a source resistor and a branch with a source load. Using the provided DC voltage, DC current, and AC frequency-response characteristics, the two models are compared in terms of output-voltage transition, current build-up, and bandwidth roll-off behavior. The results show that both models capture the qualitative impact of loading, but they differ noticeably in the transition location ofVDC, in the low-to-intermediate-bias rise ofIDC, and in the onset of AC roll-off. Under the present test conditions, the MVS model exhibits earlier DC transition, faster current establishment, and a later AC roll-off than the 65-nm foundry model. These observations indicate that a virtual-source-based compact description is not merely an alternative fitting form, but a physically meaningful modeling layer that can influence circuit-level predictions even in very simple transistor test structures.

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Liu,C. (2026). Comparative DC and AC Response of Short-Channel NMOS Test Structures Using the MVS Model and a 65-nm Foundry Model. Theoretical and Natural Science,181,16-24.
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Research Article
Published on 8 June 2026 DOI: 10.54254/2753-8818/2026.34181
Xiaoyang Li

Ultrafast Electron Diffraction (UED), built on the pump‑probe framework, has long been an indispensable tool at the cutting edge of interdisciplinary research spanning physics, chemistry, and biology. Who would have thought that, with its dual advantages of femtosecond temporal resolution and sub‑angstrom spatial resolution, it could directly "visualize" the ultrafast coherent coupling evolution of lattices, electrons, and spins in momentum space? This not only breaks the limitation that traditional spectroscopy can only indirectly infer molecular structural dynamics, but also truly pushes condensed‑matter physics, photochemical reactions, and transient quantum materials into a new era of real‑time atomic‑scale visualization. This paper systematically reviews the landmark breakthroughs of UED in uncovering the microscopic mechanisms of extreme nonequilibrium states of matter, covering phase transition dynamics, electron‑phonon coupling, molecular dynamics, and quantum ultrafast manipulation, fully demonstrating the irreplaceable scientific value of this technology.

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Li,X. (2026). Review of Ultrafast Electron Diffraction Technology. Theoretical and Natural Science,181,1-15.
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Research Article
Published on 8 June 2026 DOI: 10.54254/2753-8818/2026.DL34268
Jincheng Li

Induced drag is one of the main sources of drag acting on a wing, and it comes from the strong vortices that tend to form near the wingtips during flight. This kind of drag not only reduces aerodynamic efficiency but also means the aircraft burns more fuel than it needs to. Wingtip devices have been around for a while now, and they are basically designed to limit how much these vortices affect overall flight performance. In this paper, we take a closer look at several different wingtip device designs and how they each influence aircraft performance. We start by going over the basic mechanism behind wingtip vortex formation and why it leads to induced drag in the first place. After that, we compare both well-established designs like blended winglets and split-tip winglets with more recent ones such as multi-tip and spiroid winglets, using data from numerical simulations and wind tunnel experiments. We also look at how each design performs in terms of lift, drag reduction, and lift-to-drag ratio. Overall, the results suggest that all the devices studied are capable of improving aerodynamic performance to varying degrees.

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Li,J. (2026). The Effect of Wingtip Devices on Aircraft Aerodynamic Performance. Theoretical and Natural Science,180,18-23.
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Volumes View all volumes

Volume 181June 2026

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Proceedings of the 4th International Conference on Applied Physics and Mathematical Modeling

Conference website: https://2026.confapmm.org/

Conference date: 23 October 2026

ISBN: 978-1-80590-836-4(Print)/978-1-80590-837-1(Online)

Editor: Anil Fernando

Volume 180June 2026

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Proceedings of CONF-MPCS 2026 Symposium: Theoretic Physics and Plasma Physics

Conference website: https://2026.confmpcs.org/Dalian/Home.html

Conference date: 26 June 2026

ISBN: 978-1-80590-826-5(Print)/978-1-80590-827-2(Online)

Editor: Shuxia Zhao , Anil Fernando

Volume 179June 2026

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Proceedings of the 6th International Conference on Biological Engineering and Medical Science

Conference website: https://2026.icbiomed.org/

Conference date: 16 October 2026

ISBN: 978-1-80590-822-7(Print)/978-1-80590-823-4(Online)

Editor: Alan Wang

Volume 178June 2026

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Proceedings of ICBioMed 2026 Symposium: Biomedical Engineering and Smart Medicine

Conference website: https://2026.icbiomed.org/Hangzhou/Home.html

Conference date: 17 October 2026

ISBN: 978-1-80590-818-0(Print)/978-1-80590-819-7(Online)

Editor: Alan Wang , Li Zhang

Indexing

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