This paper investigates the relationship between health and poverty alleviation, focusing on China’s Health-Poverty Alleviation Program. Through comprehensive analysis, it reveals the strategies, achievements, and challenges in tackling the health-poverty issues. In this context, China’s experience offers important insights for the global community, particularly in integrated multisectoral approaches and data-driven decision-making. Using empirical cases, this study illuminates how policies penetrate government hierarchies, reach grassroots populations, and shape health behaviors, revealing the “structure-behavior” black box in digital health governance. The results show that there are three challenges: tension between the digital divide and health equity, street-level bureaucracy issues, and gaps in governing social determinants. Accordingly, this study proposes three actionable recommendations: inclusive digital health policies, stronger grassroots support, and social support networks with digital health.

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Type 2 diabetes mellitus (T2DM) is a major global public health crisis. It is featured by insulin resistance and chronic hyperglycemia, leading to serious complications, and current clinical treatments only relieve symptoms but cannot cure it. Recent research has shown that the Mediterranean diet (MD) is a promising way for T2DM prevention and management, and its role in regulating metabolic disorders has become a research focus. This review analyzes the core nutritional features of the MD and its regulatory effects on T2DM. It finds that the MD can balance gut microbiota, reduce chronic inflammation and oxidative stress, improve glycemic and lipid metabolism, and enhance pancreatic β-cell function and insulin sensitivity in T2DM patients. Clinical evidence also proves that the MD boosts patients’ quality of life and has more advantages than conventional diabetic diets in long-term adherence and metabolic regulation. The MD provides a new nutritional intervention method for clinical T2DM management, offering evidence-based references for clinical practice. However, existing studies lack long-term follow-up data on diabetic complications and have insufficient research on the MD’s cross-cultural adaptability and the synergy of its components. Future research should focus on personalized nutritional plans, long-term outcomes of complications and culturally adapted MD protocols. It is also necessary to explore the combined use of the MD with hypoglycemic drugs to better benefit T2DM patients worldwide.

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Gate-oxide thickness is a first-order design variable that controls electrostatic coupling, threshold behavior, and leakage in scaled field-effect transistors. This paper presents a compact Silvaco TCAD study of a silicon MOSFET in which the oxide thickness tox is swept from 1 to 5 nm while the drain bias is fixed at VD = 0.05 V. The simulation flow builds the device structure, defines the mesh and regions, assigns material/doping parameters, solves the bias sweep, and extracts transfer characteristics, threshold voltage, and subthreshold swing. The simulated ID-VG curves show a systematic positive shift with increasing tox, indicating weakened gate control. Using the maximum-slope definition of SS and a constant-current threshold criterion of ID = 1 × 10−7 A, the extracted SS increases from 70.57 to 91.31 mV/dec, while Vth increases from 0.029 to 0.517 V as tox increases from 1 to 5 nm. These results provide a clear TCAD-based visualization of the trade-off between gate dielectric scaling, switching efficiency, and threshold-voltage engineering.

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This work presents a compact-model-level comparison between the MIT virtual-source (MVS) model and a 65-nm foundry model for short-channel NMOS devices and simple load-dependent test circuits. A short-channel device schematic based on the MVS concept is first used to establish the physical picture of virtual-source-controlled transport. Two single-transistor test structures are then evaluated: a reference branch without a source resistor and a branch with a source load. Using the provided DC voltage, DC current, and AC frequency-response characteristics, the two models are compared in terms of output-voltage transition, current build-up, and bandwidth roll-off behavior. The results show that both models capture the qualitative impact of loading, but they differ noticeably in the transition location ofVDC, in the low-to-intermediate-bias rise ofIDC, and in the onset of AC roll-off. Under the present test conditions, the MVS model exhibits earlier DC transition, faster current establishment, and a later AC roll-off than the 65-nm foundry model. These observations indicate that a virtual-source-based compact description is not merely an alternative fitting form, but a physically meaningful modeling layer that can influence circuit-level predictions even in very simple transistor test structures.

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